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Each processing tool must have a defined goal for wafer throughput. This figure is the basis for understanding the required number of each type of chamber in the tool as well as the performance requirements for automation. Electrochemical wafer processing tools are often configured with several different types of chambers to support a processing sequence. Besides the different reactor types for electrochemical deposition of various metals (e.g., copper, gold, platinum, nickel, nickel-iron, and solder alloys), there are chambers for pre-plate processing (pre-alignment, pre-wetting) and post-plate processing (rinsing/drying, edge bevel etching, and annealing). For a given process sequence, the processing time for one of the process steps establishes the bottleneck for wafer throughput. If a single chamber of a given type does not provide the required throughput, additional chambers may be added, with consideration of impacts to other potential throughput bottlenecks within the process sequence. Figure 1 shows the performance of a copper deposition tool with six ECD chambers and four post-process chambers compared with simulation data. Two distinctly different regimes, representing different throughput-limiting operations, are demonstrated over this particular range of deposition "recipe" times. It is also apparent from the figure that the throughput of a complex manufacturing tool is not monotonic with process time, as might be expected.